RJK0451DPB datasheet, аналоги, основные параметры

Наименование производителя: RJK0451DPB

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: LFPAK

Аналог (замена) для RJK0451DPB

- подборⓘ MOSFET транзистора по параметрам

 

RJK0451DPB даташит

 ..1. Size:81K  renesas
r07ds0073ej rjk0451dpb.pdfpdf_icon

RJK0451DPB

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 (Previous REJ03G1763-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.1. Size:129K  renesas
rej03g1877 rjk0454dpbds.pdfpdf_icon

RJK0451DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:132K  renesas
rej03g1879 rjk0456dpbds.pdfpdf_icon

RJK0451DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:81K  renesas
r07ds0075ej rjk0453dpb.pdfpdf_icon

RJK0451DPB

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102 (Previous REJ03G1762-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Другие IGBT... RJK03E8DPA, RJK03E9DPA, RJK03F0DPA, RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS, RJK03H1DPA, IRFB31N20D, RJK0452DPB, RJK0453DPB, RJK0454DPB, RJK0455DPB, RJK0456DPB, RJK0629DPE, RJK0629DPK, RJK0629DPN