RJK0851DPB Todos los transistores

 

RJK0851DPB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0851DPB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: LFPAK
     - Selección de transistores por parámetros

 

RJK0851DPB Datasheet (PDF)

 ..1. Size:81K  renesas
r07ds0079ej rjk0851dpb.pdf pdf_icon

RJK0851DPB

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102(Previous: REJ03G1773-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.1. Size:180K  renesas
rej03g1885 rjk0856dpbds.pdf pdf_icon

RJK0851DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0851DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102(Previous: REJ03G1774-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0851DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202(Previous: REJ03G1772-0201)Silicon N Channel Power MOS FET Rev.2.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

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History: 4N60L-TQ2-R | IPP076N12N3G | CTM09N20 | NVTFS002N04CL | DMP2200UDW | NTLJS17D0P03P8Z | P2804ND5G

 

 
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