Справочник MOSFET. RJK0851DPB

 

RJK0851DPB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK0851DPB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для RJK0851DPB

 

 

RJK0851DPB Datasheet (PDF)

 ..1. Size:81K  renesas
 r07ds0079ej rjk0851dpb.pdf

RJK0851DPB RJK0851DPB

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102(Previous: REJ03G1773-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.1. Size:180K  renesas
 rej03g1885 rjk0856dpbds.pdf

RJK0851DPB RJK0851DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
 r07ds0080ej rjk0852dpb.pdf

RJK0851DPB RJK0851DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102(Previous: REJ03G1774-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
 r07ds0081ej rjk0853dpb.pdf

RJK0851DPB RJK0851DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202(Previous: REJ03G1772-0201)Silicon N Channel Power MOS FET Rev.2.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.4. Size:180K  renesas
 rej03g1884 rjk0855dpbds.pdf

RJK0851DPB RJK0851DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:159K  renesas
 rej03g1883 rjk0854dpbds.pdf

RJK0851DPB RJK0851DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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