RJK0855DPB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0855DPB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de RJK0855DPB MOSFET
RJK0855DPB Datasheet (PDF)
rej03g1884 rjk0855dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1885 rjk0856dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0080ej rjk0852dpb.pdf

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102(Previous: REJ03G1774-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag
r07ds0081ej rjk0853dpb.pdf

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202(Previous: REJ03G1772-0201)Silicon N Channel Power MOS FET Rev.2.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag
Otros transistores... RJK0657DPA , RJK0658DPA , RJK0659DPA , RJK0660DPA , RJK0851DPB , RJK0852DPB , RJK0853DPB , RJK0854DPB , IRF740 , RJK0856DPB , RJK1008DPE , RJK1008DPN , RJK1008DPP , RJK1021DPE , RJK1021DPN , RJK1028DNS , RJK1028DPA .
History: SL20N10 | 2SK526 | AOD2904
History: SL20N10 | 2SK526 | AOD2904



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