All MOSFET. RJK0855DPB Datasheet

 

RJK0855DPB Datasheet and Replacement


   Type Designator: RJK0855DPB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: LFPAK
 

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RJK0855DPB Datasheet (PDF)

 0.1. Size:180K  renesas
rej03g1884 rjk0855dpbds.pdf pdf_icon

RJK0855DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:180K  renesas
rej03g1885 rjk0856dpbds.pdf pdf_icon

RJK0855DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0855DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102(Previous: REJ03G1774-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0855DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202(Previous: REJ03G1772-0201)Silicon N Channel Power MOS FET Rev.2.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

Datasheet: RJK0657DPA , RJK0658DPA , RJK0659DPA , RJK0660DPA , RJK0851DPB , RJK0852DPB , RJK0853DPB , RJK0854DPB , IRF740 , RJK0856DPB , RJK1008DPE , RJK1008DPN , RJK1008DPP , RJK1021DPE , RJK1021DPN , RJK1028DNS , RJK1028DPA .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - RJK0855DPB MOSFET datasheet

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