RJK1021DPN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK1021DPN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220AB

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RJK1021DPN datasheet

 0.1. Size:120K  renesas
 rej03g1628 rjk1021dpnds.pdf pdf_icon

RJK1021DPN

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:121K  renesas
 rej03g1630 rjk1021dpeds.pdf pdf_icon

RJK1021DPN

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:92K  renesas
 r07ds0195ej rjk1028dns.pdf pdf_icon

RJK1021DPN

Preliminary Datasheet RJK1028DNS R07DS0195EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Nov 08, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

 8.2. Size:85K  renesas
 r07ds0197ej rjk1028dsp.pdf pdf_icon

RJK1021DPN

Preliminary Datasheet RJK1028DSP R07DS0197EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Nov 08, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PRSP0008DD-

MOSTRAR MÁS

Otros transistores... RJK0853DPB, RJK0854DPB, RJK0855DPB, RJK0856DPB, RJK1008DPE, RJK1008DPN, RJK1008DPP, RJK1021DPE, IRFP460, RJK1028DNS, RJK1028DPA, RJK1028DSP, RJK1051DPB, RJK1052DPB, RJK1053DPB, RJK1054DPB, RJK1055DPB