RJK1021DPN datasheet, аналоги, основные параметры

Наименование производителя: RJK1021DPN

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: TO220AB

Аналог (замена) для RJK1021DPN

- подборⓘ MOSFET транзистора по параметрам

 

RJK1021DPN даташит

 0.1. Size:120K  renesas
 rej03g1628 rjk1021dpnds.pdf pdf_icon

RJK1021DPN

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:121K  renesas
 rej03g1630 rjk1021dpeds.pdf pdf_icon

RJK1021DPN

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:92K  renesas
 r07ds0195ej rjk1028dns.pdf pdf_icon

RJK1021DPN

Preliminary Datasheet RJK1028DNS R07DS0195EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Nov 08, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

 8.2. Size:85K  renesas
 r07ds0197ej rjk1028dsp.pdf pdf_icon

RJK1021DPN

Preliminary Datasheet RJK1028DSP R07DS0197EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Nov 08, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PRSP0008DD-

ПОКАЗАТЬ ЕЩЁ

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