RJK1053DPB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK1053DPB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.6 nS

Cossⓘ - Capacitancia de salida: 508 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: LFPAK

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RJK1053DPB datasheet

 ..1. Size:81K  renesas
 r07ds0084ej rjk1053dpb.pdf pdf_icon

RJK1053DPB

Preliminary Datasheet RJK1053DPB R07DS0084EJ0102 (Previous REJ03G1770-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 10 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.1. Size:109K  renesas
 r07ds0093ej rjk1054dpb.pdf pdf_icon

RJK1053DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200 (Previous REJ03G1886-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Aug 17, 2010 Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code PTZZ0005DA-A (Pack

 8.2. Size:81K  renesas
 r07ds0083ej rjk1052dpb.pdf pdf_icon

RJK1053DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102 (Previous REJ03G1769-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.3. Size:81K  renesas
 r07ds0082ej rjk1051dpb.pdf pdf_icon

RJK1053DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102 (Previous REJ03G1768-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package

MOSTRAR MÁS

Otros transistores... RJK1008DPP, RJK1021DPE, RJK1021DPN, RJK1028DNS, RJK1028DPA, RJK1028DSP, RJK1051DPB, RJK1052DPB, IRF640N, RJK1054DPB, RJK1055DPB, RJK1056DPB, RJK1211DNS, RJK1211DPA, RJK1212DNS, RJK1212DPA, RJK1525DPE