RJK1211DNS Todos los transistores

 

RJK1211DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK1211DNS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: HWSON8
 

 Búsqueda de reemplazo de RJK1211DNS MOSFET

   - Selección ⓘ de transistores por parámetros

 

RJK1211DNS Datasheet (PDF)

 ..1. Size:95K  renesas
 r07ds0090ej rjk1211dns.pdf pdf_icon

RJK1211DNS

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 6.1. Size:108K  renesas
 r07ds0089ej rjk1211dpa.pdf pdf_icon

RJK1211DNS

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.1. Size:149K  renesas
 r07ds0091ej rjk1212dpa.pdf pdf_icon

RJK1211DNS

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.2. Size:125K  renesas
 r07ds0092ej rjk1212dns.pdf pdf_icon

RJK1211DNS

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

MOSTRAR MÁS

Otros transistores... RJK1028DPA , RJK1028DSP , RJK1051DPB , RJK1052DPB , RJK1053DPB , RJK1054DPB , RJK1055DPB , RJK1056DPB , IRF3710 , RJK1211DPA , RJK1212DNS , RJK1212DPA , RJK1525DPE , RJK1525DPF , RJK1526DPE , RJK1526DPF , RJK1526DPJ .

 

 
Back to Top

 


 
.