RJK1211DNS Todos los transistores

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RJK1211DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK1211DNS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 10 W

Tensión drenaje-fuente (Vds): 120 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: HWSON8

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RJK1211DNS Datasheet (PDF)

1.1. r07ds0090ej rjk1211dns.pdf Size:95K _renesas

RJK1211DNS
RJK1211DNS

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Jan 18, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 100 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: H

2.1. r07ds0089ej rjk1211dpa.pdf Size:108K _renesas

RJK1211DNS
RJK1211DNS

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300 Silicon N Channel Power MOS FET Rev.3.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m? typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package name: W

4.1. r07ds0091ej rjk1212dpa.pdf Size:149K _renesas

RJK1211DNS
RJK1211DNS

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m? typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package name: W

4.2. r07ds0092ej rjk1212dns.pdf Size:125K _renesas

RJK1211DNS
RJK1211DNS

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Jun 18, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 240 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: H

Otros transistores... RJK1028DPA , RJK1028DSP , RJK1051DPB , RJK1052DPB , RJK1053DPB , RJK1054DPB , RJK1055DPB , RJK1056DPB , BUZ11 , RJK1211DPA , RJK1212DNS , RJK1212DPA , RJK1525DPE , RJK1525DPF , RJK1526DPE , RJK1526DPF , RJK1526DPJ .

 


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