Справочник MOSFET. RJK1211DNS

 

RJK1211DNS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK1211DNS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 10 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Qgⓘ - Общий заряд затвора: 8 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: HWSON8

 Аналог (замена) для RJK1211DNS

 

 

RJK1211DNS Datasheet (PDF)

 ..1. Size:95K  renesas
 r07ds0090ej rjk1211dns.pdf

RJK1211DNS RJK1211DNS

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 6.1. Size:108K  renesas
 r07ds0089ej rjk1211dpa.pdf

RJK1211DNS RJK1211DNS

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.1. Size:149K  renesas
 r07ds0091ej rjk1212dpa.pdf

RJK1211DNS RJK1211DNS

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.2. Size:125K  renesas
 r07ds0092ej rjk1212dns.pdf

RJK1211DNS RJK1211DNS

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

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