RJK2006DPF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK2006DPF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Corriente continua de drenaje |Id|: 40 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.052 Ohm
Paquete / Cubierta: LDPAK
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RJK2006DPF Datasheet (PDF)
rej03g0512 rjk2006dpj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk2006dpe.pdf
Isc N-Channel MOSFET Transistor RJK2006DPEFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
rej03g0474 rjk2009dpm.pdf
Preliminary Datasheet RJK2009DPM REJ03G0474-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
