RJK2006DPF Todos los transistores

 

RJK2006DPF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK2006DPF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: LDPAK

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RJK2006DPF Datasheet (PDF)

 5.1. Size:238K  renesas
rej03g0512 rjk2006dpj.pdf

RJK2006DPF
RJK2006DPF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:262K  inchange semiconductor
rjk2006dpe.pdf

RJK2006DPF
RJK2006DPF

Isc N-Channel MOSFET Transistor RJK2006DPEFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 8.1. Size:86K  renesas
rej03g0474 rjk2009dpm.pdf

RJK2006DPF
RJK2006DPF

Preliminary Datasheet RJK2009DPM REJ03G0474-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol

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