RJK4006DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RJK4006DPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: MP3A

Búsqueda de reemplazo de MOSFET RJK4006DPD

RJK4006DPD Datasheet (PDF)

0.1. Size:116K renesas
rej03g1547 rjk4006dpdds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.1. Size:79K renesas
r07ds0228ej rjk4006dpp.pdf

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

8.1. Size:84K renesas
rjk4002dje.pdf

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max

8.2. Size:94K renesas
rjk4002dpd.pdf

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1

8.3. Size:78K renesas
r07ds0551ej rjk4002dpp.pdf

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso

8.4. Size:76K renesas
r07ds0229ej rjk4007dpp.pdf

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 15, 2010Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Sourc

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: