Справочник MOSFET. RJK4006DPD

 

RJK4006DPD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK4006DPD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: MP3A

 Аналог (замена) для RJK4006DPD

 

 

RJK4006DPD Datasheet (PDF)

 0.1. Size:116K  renesas
 rej03g1547 rjk4006dpdds.pdf

RJK4006DPD RJK4006DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:79K  renesas
 r07ds0228ej rjk4006dpp.pdf

RJK4006DPD RJK4006DPD

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

 8.1. Size:84K  renesas
 rjk4002dje.pdf

RJK4006DPD RJK4006DPD

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max

 8.2. Size:94K  renesas
 rjk4002dpd.pdf

RJK4006DPD RJK4006DPD

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1

 8.3. Size:78K  renesas
 r07ds0551ej rjk4002dpp.pdf

RJK4006DPD RJK4006DPD

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso

 8.4. Size:76K  renesas
 r07ds0229ej rjk4007dpp.pdf

RJK4006DPD RJK4006DPD

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 15, 2010Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Sourc

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