RJK4514DPK Todos los transistores

 

RJK4514DPK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK4514DPK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 46 nC

Tiempo de elevación (tr): 58 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de MOSFET RJK4514DPK

 

RJK4514DPK Datasheet (PDF)

1.1. rej03g1514 rjk4514dpkds.pdf Size:206K _renesas

RJK4514DPK
RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g1540 rjk4512dpeds.pdf Size:88K _renesas

RJK4514DPK
RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1869 rjk4515dpkds.pdf Size:94K _renesas

RJK4514DPK
RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rej03g1586 rjk4513dpeds.pdf Size:92K _renesas

RJK4514DPK
RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rjk4512dpp-e0.pdf Size:94K _renesas

RJK4514DPK
RJK4514DPK

 Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features  Low on-resistance RDS(on) = 0.43  typ. (at ID = 7 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source 1

 4.5. r07ds0132ej rjk4518dpk.pdf Size:78K _renesas

RJK4514DPK
RJK4514DPK

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 (Previous: REJ03G1529-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Sep 08, 2010 Features ? Low on-resistance RDS(on) = 0.11 ? typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain

Otros transistores... RJK4007DPP-M0 , RJK4012DPE , RJK4013DPE , RJK4014DPK , RJK4015DPK , RJK4018DPK , RJK4512DPE , RJK4513DPE , BF245C , RJK4515DPK , RJK4518DPK , RJK5003DPD , RJK5006DPD , RJK5012DPE , RJK5012DPP-M0 , RJK5013DPE , RJK5013DPK .

 

 
Back to Top

 


RJK4514DPK
  RJK4514DPK
  RJK4514DPK
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |

 

 

 
Back to Top