RJK4514DPK datasheet, аналоги, основные параметры

Наименование производителя: RJK4514DPK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 58 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm

Тип корпуса: TO3P

Аналог (замена) для RJK4514DPK

- подборⓘ MOSFET транзистора по параметрам

 

RJK4514DPK даташит

 0.1. Size:206K  renesas
rej03g1514 rjk4514dpkds.pdfpdf_icon

RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdfpdf_icon

RJK4514DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:94K  renesas
rjk4512dpp-e0.pdfpdf_icon

RJK4514DPK

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1

 8.3. Size:78K  renesas
r07ds0132ej rjk4518dpk.pdfpdf_icon

RJK4514DPK

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 (Previous REJ03G1529-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Sep 08, 2010 Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga

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