RJK5013DPK Todos los transistores

 

RJK5013DPK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK5013DPK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.465 Ohm
   Paquete / Cubierta: TO3P

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RJK5013DPK Datasheet (PDF)

 0.1. Size:119K  renesas
rej03g1491 rjk5013dpkds.pdf

RJK5013DPK
RJK5013DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf

RJK5013DPK
RJK5013DPK

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300(Previous: REJ03G1488-0200)Silicon N Channel MOS FET Rev.3.00Jun 29, 2011High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )

 5.2. Size:80K  renesas
rjk5013dpp-e0.pdf

RJK5013DPK
RJK5013DPK

Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100500V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 29, 2012Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source

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