RJK5013DPK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK5013DPK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 38 nC
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 155 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.465 Ohm
Encapsulados: TO3P
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RJK5013DPK datasheet
rej03g1491 rjk5013dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0487ej rjk5013dpe.pdf
Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) )
rjk5013dpp-e0.pdf
Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100 500V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 29, 2012 Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source
Otros transistores... RJK4514DPK, RJK4515DPK, RJK4518DPK, RJK5003DPD, RJK5006DPD, RJK5012DPE, RJK5012DPP-M0, RJK5013DPE, 18N50, RJK5014DPK, RJK5015DPK, RJK5015DPM, RJK5018DPK, RJK5020DPK, RJK5026DPE, RJK5026DPP-M0, RJK5030DPD
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