RJK5013DPK
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK5013DPK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.465
Ohm
Package:
TO3P
RJK5013DPK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK5013DPK
Datasheet (PDF)
0.1. Size:119K renesas
rej03g1491 rjk5013dpkds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
5.1. Size:83K renesas
r07ds0487ej rjk5013dpe.pdf
Preliminary Datasheet RJK5013DPE R07DS0487EJ0300(Previous: REJ03G1488-0200)Silicon N Channel MOS FET Rev.3.00Jun 29, 2011High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )
5.2. Size:80K renesas
rjk5013dpp-e0.pdf
Preliminary Datasheet RJK5013DPP-E0 R07DS0606EJ0100500V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 29, 2012Features Low on-resistance RDS(on) = 0.385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source
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