RJK60S5DPK-M0 Todos los transistores

 

RJK60S5DPK-M0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK60S5DPK-M0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 192.3 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 2160 pF

Resistencia drenaje-fuente RDS(on): 0.178 Ohm

Empaquetado / Estuche: TO3PSG

Búsqueda de reemplazo de MOSFET RJK60S5DPK-M0

 

RJK60S5DPK-M0 Datasheet (PDF)

0.1. rjk60s5dpk-m0.pdf Size:91K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0400600V - 20A - SJ MOS FET Rev.4.00High Speed Power Switching Apr 23, 2012Features Superjunction MOSFET Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package

4.1. r07ds0245ej rjk60s5dpk.pdf Size:71K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary DatasheetRJK60S5DPK-M0 R07DS0245EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jan 19, 2011Features Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZH-A(Package name:TO-3PSG)D1. Gate2. Drain (Flange)G3

 9.1. rjk6035dpp-e0.pdf Size:81K _1

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100600V - 6A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S

9.2. r07ds0445ej rjk6012dpe.pdf Size:82K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6012DPE R07DS0445EJ0300(Previous: REJ03G1481-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 17, 2011Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D

 9.3. rej03g1935 rjk6006dpdds.pdf Size:74K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6006DPD REJ03G1935-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3

9.4. rej03g1484 rjk6022djeds.pdf Size:116K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. rej03g1483 rjk6002dpdds.pdf Size:115K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.6. rej03g1870 rjk6025dpeds.pdf Size:91K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.7. rjk6053dpp-m0.pdf Size:83K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary RJK6053DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1800-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

9.8. rjk6002dje.pdf Size:59K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary DatasheetRJK6002DJE R07DS0845EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321

9.9. rjk6002dpe.pdf Size:98K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jun 21, 2012Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4.

9.10. rjk6052dpp-m0.pdf Size:77K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary RJK6052DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1799-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

9.11. rjk6036dp3-a0.pdf Size:61K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary DatasheetRJK6036DP3-A0 R07DS0841EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSP0004ZB-APackage name: SOT-223D41. Gate2. DrainG3 3. Source24.

9.12. rej03g1752 rjk6015dpmds.pdf Size:91K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.13. rej03g1536 rjk6015dpkds.pdf Size:120K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.14. rej03g1577 rjk6011djeds.pdf Size:114K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.15. rjk6025dpd.pdf Size:135K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 17, 2012Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source12

9.16. rjk6032dph-e0.pdf Size:90K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100600V - 3A - MOS FET Rev.1.00High Speed Power Switching Jan 23, 2013Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4.

9.17. rjk6013dpp-e0.pdf Size:78K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100600V - 11A - MOS FET Rev.1.00High Speed Power Switching Feb 20, 2012Features Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source

9.18. rej03g1895 rjk6029djads.pdf Size:79K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6029DJA REJ03G1895-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 18, 2010Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92(1))D1. Source2. Drain3. GateG

9.19. rjk6024dp3-a0.pdf Size:136K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc

9.20. r07ds0424ej rjk6024dpe.pdf Size:98K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc

9.21. rej03g1936 rjk6024dpdds.pdf Size:74K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

9.22. rjk6002dph-e0.pdf Size:90K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Mar 21, 2013Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

9.23. rjk6054dpp-m0.pdf Size:77K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary RJK6054DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1801-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

9.24. rej03g1479 rjk6026dpeds.pdf Size:117K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.25. r07ds0131ej rjk6018dpm.pdf Size:51K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6018DPM R07DS0131EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Sep 09, 2010Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS

9.26. rjk6025dph-e0.pdf Size:89K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

9.27. r07ds0553ej rjk6034dpd.pdf Size:76K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100600 V - 1 A - MOS FET Rev.1.00High Speed Power Switching Oct 13, 2011Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-AD(Package name : TO-252)41. Gate2. DrainG3. Source

9.28. rej03g1465 rjk6020dpkds.pdf Size:99K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.29. rej03g1535 rjk6013dpeds.pdf Size:89K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.30. rjk6066dpp-m0.pdf Size:86K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary RJK6066DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1802-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

9.31. r07ds0495ej rjk6018dpk.pdf Size:79K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

Preliminary Datasheet RJK6018DPK R07DS0495EJ0200(Previous: REJ03G1537-0100)600 V - 30 A - MOS FET Rev.2.00High Speed Power Switching Jul 22, 2011Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2.

9.32. rej03g1517 rjk6014dpkds.pdf Size:122K _renesas

RJK60S5DPK-M0
RJK60S5DPK-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.33. rjk6014dpk.pdf Size:258K _inchange_semiconductor

RJK60S5DPK-M0
RJK60S5DPK-M0

isc N-Channel MOSFET Transistor RJK6014DPKFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

9.34. rjk6015dpk.pdf Size:233K _inchange_semiconductor

RJK60S5DPK-M0
RJK60S5DPK-M0

isc N-Channel MOSFET Transistor RJK6015DPKFEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Low on-resistance Low leakage current High speed switching

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