RJK60S5DPK-M0 Datasheet. Specs and Replacement
Type Designator: RJK60S5DPK-M0
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 192.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ -
Output Capacitance: 2160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.178 Ohm
Package: TO3PSG
RJK60S5DPK-M0 substitution
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RJK60S5DPK-M0 datasheet
..1. Size:91K renesas
rjk60s5dpk-m0.pdf 
Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0400 600V - 20A - SJ MOS FET Rev.4.00 High Speed Power Switching Apr 23, 2012 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25 C) Outline RENESAS Package... See More ⇒
4.1. Size:71K renesas
r07ds0245ej rjk60s5dpk.pdf
Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jan 19, 2011 Features Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZH-A (Package name TO-3PSG) D 1. Gate 2. Drain (Flange) G 3... See More ⇒
9.1. Size:81K 1
rjk6035dpp-e0.pdf
Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100 600V - 6A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S... See More ⇒
9.2. Size:51K renesas
r07ds0131ej rjk6018dpm.pdf
Preliminary Datasheet RJK6018DPM R07DS0131EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Sep 09, 2010 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S... See More ⇒
9.3. Size:91K renesas
rej03g1870 rjk6025dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.4. Size:98K renesas
r07ds0424ej rjk6024dpe.pdf
Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc... See More ⇒
9.5. Size:122K renesas
rej03g1517 rjk6014dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.6. Size:79K renesas
r07ds0495ej rjk6018dpk.pdf
Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 (Previous REJ03G1537-0100) 600 V - 30 A - MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2.... See More ⇒
9.7. Size:115K renesas
rej03g1483 rjk6002dpdds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.8. Size:74K renesas
rej03g1935 rjk6006dpdds.pdf
Preliminary Datasheet RJK6006DPD REJ03G1935-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 ... See More ⇒
9.9. Size:78K renesas
rjk6013dpp-e0.pdf
Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100 600V - 11A - MOS FET Rev.1.00 High Speed Power Switching Feb 20, 2012 Features Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source ... See More ⇒
9.10. Size:116K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.11. Size:136K renesas
rjk6024dp3-a0.pdf
Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc... See More ⇒
9.12. Size:82K renesas
r07ds0445ej rjk6012dpe.pdf
Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 (Previous REJ03G1481-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 17, 2011 Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D ... See More ⇒
9.13. Size:61K renesas
rjk6036dp3-a0.pdf
Preliminary Datasheet RJK6036DP3-A0 R07DS0841EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSP0004ZB-A Package name SOT-223 D 4 1. Gate 2. Drain G 3 3. Source 2 4.... See More ⇒
9.14. Size:74K renesas
rej03g1936 rjk6024dpdds.pdf
Preliminary Datasheet RJK6024DPD REJ03G1936-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source ... See More ⇒
9.15. Size:98K renesas
rjk6002dpe.pdf
Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.... See More ⇒
9.16. Size:120K renesas
rej03g1536 rjk6015dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.17. Size:135K renesas
rjk6025dpd.pdf
Preliminary Datasheet RJK6025DPD R07DS0676EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2... See More ⇒
9.18. Size:77K renesas
rjk6054dpp-m0.pdf
Preliminary RJK6054DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1801-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra... See More ⇒
9.19. Size:117K renesas
rej03g1479 rjk6026dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.20. Size:89K renesas
rjk6025dph-e0.pdf
Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒
9.21. Size:91K renesas
rej03g1752 rjk6015dpmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.23. Size:77K renesas
rjk6052dpp-m0.pdf
Preliminary RJK6052DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1799-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra... See More ⇒
9.24. Size:59K renesas
rjk6002dje.pdf
Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1... See More ⇒
9.25. Size:76K renesas
r07ds0553ej rjk6034dpd.pdf
Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100 600 V - 1 A - MOS FET Rev.1.00 High Speed Power Switching Oct 13, 2011 Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-A D (Package name TO-252) 4 1. Gate 2. Drain G 3. Source... See More ⇒
9.26. Size:90K renesas
rjk6032dph-e0.pdf
Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100 600V - 3A - MOS FET Rev.1.00 High Speed Power Switching Jan 23, 2013 Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. ... See More ⇒
9.27. Size:99K renesas
rej03g1465 rjk6020dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.28. Size:90K renesas
rjk6002dph-e0.pdf
Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Mar 21, 2013 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D... See More ⇒
9.29. Size:86K renesas
rjk6066dpp-m0.pdf
Preliminary RJK6066DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1802-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra... See More ⇒
9.30. Size:83K renesas
rjk6053dpp-m0.pdf
Preliminary RJK6053DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1800-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra... See More ⇒
9.31. Size:79K renesas
rej03g1895 rjk6029djads.pdf
Preliminary Datasheet RJK6029DJA REJ03G1895-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 18, 2010 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0003DA-A (Package name TO-92(1)) D 1. Source 2. Drain 3. Gate G ... See More ⇒
9.32. Size:114K renesas
rej03g1577 rjk6011djeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.33. Size:233K inchange semiconductor
rjk6015dpk.pdf
isc N-Channel MOSFET Transistor RJK6015DPK FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low on-resistance Low leakage current High speed switching... See More ⇒
9.34. Size:258K inchange semiconductor
rjk6014dpk.pdf
isc N-Channel MOSFET Transistor RJK6014DPK FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-... See More ⇒
Detailed specifications: RJK6025DPE, RJK6026DPE, RJK6029DJA, RJK6034DPD-E0, RJK6052DPP-M0, RJK6053DPP-M0, RJK6054DPP-M0, RJK6066DPP-M0, IRF540N, RJL5012DPE, RJL5012DPP-M0, RJL5013DPE, RJL5014DPK, RJL5015DPK, RJL5018DPK, RJL5020DPK, RJL5032DPP-M0
Keywords - RJK60S5DPK-M0 MOSFET specs
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