RJL5032DPP-M0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Datasheet RJL5032DPP-M0 R07DS0251EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 23, 2011Features Low on-state resistance RDS(on) = 2.2 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Built in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. Drai

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJL5020DPK R07DS0239EJ0500(Previous: REJ03G1733-0400)Silicon N Channel MOS FET Rev.5.00High Speed Power Switching Jan 07, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.105 typ. (at ID = 19 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

Preliminary Datasheet RJL5014DPK R07DS0436EJ0200(Previous: REJ03G1798-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 14, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.32 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004Z

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200(Previous: REJ03G1755-0100)Silicon N Channel MOS FET Rev.2.00Apr 18, 2011High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B

Preliminary Datasheet RJL5015DPK REJ03G1912-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 27, 2010Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200(Previous: REJ03G1745-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 14, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.