RJL5032DPP-M0 Datasheet. Equivalente

 4.1. Size:96K  renesas
 r07ds0251ej rjl5032dpp.pdf

Preliminary Datasheet RJL5032DPP-M0 R07DS0251EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.2 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Built in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drai

 9.1. Size:204K  renesas
 rjl5012dpp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:181K  renesas
 rjl5013dpp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:80K  renesas
 r07ds0239ej rjl5020dpk.pdf

Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 (Previous REJ03G1733-0400) Silicon N Channel MOS FET Rev.5.00 High Speed Power Switching Jan 07, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.105 typ. (at ID = 19 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE

 9.4. Size:93K  renesas
 rjl5012dpp-m0.pdf

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL)

 9.5. Size:84K  renesas
 r07ds0436ej rjl5014dpk.pdf

Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 (Previous REJ03G1798-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.32 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004Z

 9.6. Size:99K  renesas
 r07ds0419ej rjl5012dpp.pdf

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL)

 9.7. Size:101K  renesas
 r07ds0359ej rjl5013dpe.pdf

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 (Previous REJ03G1755-0100) Silicon N Channel MOS FET Rev.2.00 Apr 18, 2011 High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B

 9.8. Size:77K  renesas
 rej03g1912 rjl5015dpkds.pdf

Preliminary Datasheet RJL5015DPK REJ03G1912-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 27, 2010 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1

 9.9. Size:210K  renesas
 rjl5014dpp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:80K  renesas
 r07ds0435ej rjl5012dpe.pdf

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-

 9.11. Size:181K  renesas
 rej03g1817 rjl5018dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.