All MOSFET. RJL5032DPP-M0 Datasheet

 

RJL5032DPP-M0 MOSFET. Datasheet pdf. Equivalent

Type Designator: RJL5032DPP-M0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30.6 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.5 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220FL

RJL5032DPP-M0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJL5032DPP-M0 Datasheet (PDF)

1.1. r07ds0251ej rjl5032dpp.pdf Size:96K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5032DPP-M0 R07DS0251EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.2 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Built in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. So

5.1. r07ds0419ej rjl5012dpp.pdf Size:99K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2

5.2. rej03g1912 rjl5015dpkds.pdf Size:77K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5015DPK REJ03G1912-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 27, 2010 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.23 ? typ. (at ID = 11 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drai

5.3. r07ds0359ej rjl5013dpe.pdf Size:101K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 (Previous: REJ03G1755-0100) Silicon N Channel MOS FET Rev.2.00 Apr 18, 2011 High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 ? typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name

5.4. rjl5012dpp-m0.pdf Size:93K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

 Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)

5.5. r07ds0436ej rjl5014dpk.pdf Size:84K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 (Previous: REJ03G1798-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.32 ? typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package n

5.6. rej03g1817 rjl5018dpkds.pdf Size:181K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. r07ds0239ej rjl5020dpk.pdf Size:80K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 (Previous: REJ03G1733-0400) Silicon N Channel MOS FET Rev.5.00 High Speed Power Switching Jan 07, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.105 ? typ. (at ID = 19 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package na

5.8. r07ds0435ej rjl5012dpe.pdf Size:80K _renesas

RJL5032DPP-M0
RJL5032DPP-M0

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous: REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package nam

Datasheet: RJK60S5DPK-M0 , RJL5012DPE , RJL5012DPP-M0 , RJL5013DPE , RJL5014DPK , RJL5015DPK , RJL5018DPK , RJL5020DPK , IRF530 , RJL6012DPE , RJL6013DPE , RJL6015DPK , RJL6018DPK , RJL6020DPK , RJL6032DPP-M0 , RJM0306JSP , RQJ0201UGDQA .

 


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