RQJ0202VGDQA Todos los transistores

 

RQJ0202VGDQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQJ0202VGDQA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 2.7 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.083 Ohm

Empaquetado / Estuche: MPAK

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RQJ0202VGDQA Datasheet (PDF)

1.1. r07ds0291ej rqj0202vgd.pdf Size:85K _renesas

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0202VGDQA R07DS0291EJ0400 (Previous: REJ03G1318-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 83 m? typ (VGS = 4.5 V, ID = 1.4 A) ? Low drive current ? High speed switching ? 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D G 1. Source 3 2 2

4.1. r07ds0290ej rqj0201ugd.pdf Size:85K _renesas

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400 (Previous: REJ03G1317-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 53 m? typ (VGS = 4.5 V, ID = 1.8 A) ? Low drive current ? High speed switching ? 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2

4.2. r07ds0293ej rqj0204xgd.pdf Size:86K _renesas

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 (Previous: REJ03G1320-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 219 m? typ (VGS = 4.5 V, ID = 0.8 A) ? Low drive current ? High speed switching ? 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2

 4.3. r07ds0292ej rqj0203wgd.pdf Size:85K _renesas

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous: REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 142 m? typ (VGS = 4.5 V, ID = 1.1 A) ? Low drive current ? High speed switching ? 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2

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