RQJ0202VGDQA Datasheet. Specs and Replacement

Type Designator: RQJ0202VGDQA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: SC59A MPAK

RQJ0202VGDQA substitution

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RQJ0202VGDQA datasheet

 4.1. Size:85K  renesas
 r07ds0291ej rqj0202vgd.pdf pdf_icon

RQJ0202VGDQA

Preliminary Datasheet RQJ0202VGDQA R07DS0291EJ0400 (Previous REJ03G1318-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 83 m typ (VGS = 4.5 V, ID = 1.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G ... See More ⇒

 8.1. Size:86K  renesas
 r07ds0293ej rqj0204xgd.pdf pdf_icon

RQJ0202VGDQA

Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400 (Previous REJ03G1320-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 219 m typ (VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3... See More ⇒

 8.2. Size:85K  renesas
 r07ds0290ej rqj0201ugd.pdf pdf_icon

RQJ0202VGDQA

Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400 (Previous REJ03G1317-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 53 m typ (VGS = 4.5 V, ID = 1.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 ... See More ⇒

 8.3. Size:85K  renesas
 r07ds0292ej rqj0203wgd.pdf pdf_icon

RQJ0202VGDQA

Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400 (Previous REJ03G1319-0300) Silicon P Channel MOS FET Rev.4.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 142 m typ (VGS = 4.5 V, ID = 1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3... See More ⇒

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Detailed specifications: RJL6012DPE, RJL6013DPE, RJL6015DPK, RJL6018DPK, RJL6020DPK, RJL6032DPP-M0, RJM0306JSP, RQJ0201UGDQA, 2N7000, RQJ0203WGDQA, RQJ0204XGDQA, RQJ0301HGDQS, RQJ0302NGDQA, RQJ0303PGDQA, RQJ0304DQDQA, RQJ0304DQDQS, RQJ0305EQDQA

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