All MOSFET. RQJ0202VGDQA Datasheet

 

RQJ0202VGDQA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RQJ0202VGDQA
   Marking Code: VG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 0.8 W
   Maximum Drain-Source Voltage |Vds|: 20 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 0.4 V
   Maximum Drain Current |Id|: 2.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 4.3 nC
   Rise Time (tr): 57 nS
   Drain-Source Capacitance (Cd): 102 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm
   Package: SC59A MPAK

 RQJ0202VGDQA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RQJ0202VGDQA Datasheet (PDF)

 4.1. Size:85K  renesas
r07ds0291ej rqj0202vgd.pdf

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0202VGDQA R07DS0291EJ0400(Previous: REJ03G1318-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 83 m typ (VGS = 4.5 V, ID = 1.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3DG

 8.1. Size:86K  renesas
r07ds0293ej rqj0204xgd.pdf

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400(Previous: REJ03G1320-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 219 m typ (VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.2. Size:85K  renesas
r07ds0290ej rqj0201ugd.pdf

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400(Previous: REJ03G1317-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 53 m typ (VGS = 4.5 V, ID = 1.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.3. Size:85K  renesas
r07ds0292ej rqj0203wgd.pdf

RQJ0202VGDQA
RQJ0202VGDQA

Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400(Previous: REJ03G1319-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 142 m typ (VGS = 4.5 V, ID = 1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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