RQK0302GGDQS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RQK0302GGDQS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.102 Ohm
Paquete / Cubierta: UPAK SC62
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RQK0302GGDQS PDF Specs
rej03g1270 rqk0302ggdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0305ej rqk0302ggd.pdf
Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 (Previous REJ03G1275-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G 1. Sour... See More ⇒
rej03g1269 rqk0301fgdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0306ej rqk0303mgd.pdf
Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S... See More ⇒
Otros transistores... RQJ0602EGDQS , RQJ0603LGDQA , RQK0201QGDQA , RQK0202RGDQA , RQK0203SGDQA , RQK0204TGDQA , RQK0301FGDQS , RQK0302GGDQA , AON7410 , RQK0303MGDQA , RQK0601AGDQS , RQK0603CGDQA , RQK0603CGDQS , RQK0604IGDQA , RQK0605JGDQA , RQK0606KGDQA , RQK0607AQDQS .
History: SSF1321P
History: SSF1321P
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