RQK0302GGDQS PDF and Equivalents Search

 

RQK0302GGDQS Specs and Replacement

Type Designator: RQK0302GGDQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: UPAK SC62

RQK0302GGDQS substitution

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RQK0302GGDQS datasheet

 0.1. Size:104K  renesas
rej03g1270 rqk0302ggdqsds.pdf pdf_icon

RQK0302GGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 4.1. Size:83K  renesas
r07ds0305ej rqk0302ggd.pdf pdf_icon

RQK0302GGDQS

Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 (Previous REJ03G1275-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D G 1. Sour... See More ⇒

 8.1. Size:104K  renesas
rej03g1269 rqk0301fgdqsds.pdf pdf_icon

RQK0302GGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:83K  renesas
r07ds0306ej rqk0303mgd.pdf pdf_icon

RQK0302GGDQS

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S... See More ⇒

Detailed specifications: RQJ0602EGDQS, RQJ0603LGDQA, RQK0201QGDQA, RQK0202RGDQA, RQK0203SGDQA, RQK0204TGDQA, RQK0301FGDQS, RQK0302GGDQA, AON7410, RQK0303MGDQA, RQK0601AGDQS, RQK0603CGDQA, RQK0603CGDQS, RQK0604IGDQA, RQK0605JGDQA, RQK0606KGDQA, RQK0607AQDQS

Keywords - RQK0302GGDQS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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