RQK0303MGDQA Todos los transistores

 

RQK0303MGDQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQK0303MGDQA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 3.7 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.042 Ohm

Empaquetado / Estuche: MPAK

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RQK0303MGDQA Datasheet (PDF)

1.1. r07ds0306ej rqk0303mgd.pdf Size:83K _renesas

RQK0303MGDQA
RQK0303MGDQA

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous: REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 42 m? typ (VGS = 10 V, ID = 1.8 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. G

4.1. rej03g1269 rqk0301fgdqsds.pdf Size:104K _renesas

RQK0303MGDQA
RQK0303MGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1270 rqk0302ggdqsds.pdf Size:104K _renesas

RQK0303MGDQA
RQK0303MGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0305ej rqk0302ggd.pdf Size:83K _renesas

RQK0303MGDQA
RQK0303MGDQA

Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 (Previous: REJ03G1275-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 92 m? typ (VGS = 10 V, ID = 1.3 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D G 1. Source 3 2 2. G

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