Справочник MOSFET. RQK0303MGDQA

 

RQK0303MGDQA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RQK0303MGDQA
   Маркировка: MG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.9 nC
   trⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 87 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.053 Ohm
   Тип корпуса: SC59A MPAK

 Аналог (замена) для RQK0303MGDQA

 

 

RQK0303MGDQA Datasheet (PDF)

 4.1. Size:83K  renesas
 r07ds0306ej rqk0303mgd.pdf

RQK0303MGDQA RQK0303MGDQA

Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500(Previous: REJ03G1276-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. S

 8.1. Size:104K  renesas
 rej03g1270 rqk0302ggdqsds.pdf

RQK0303MGDQA RQK0303MGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  renesas
 rej03g1269 rqk0301fgdqsds.pdf

RQK0303MGDQA RQK0303MGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:83K  renesas
 r07ds0305ej rqk0302ggd.pdf

RQK0303MGDQA RQK0303MGDQA

Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500(Previous: REJ03G1275-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3DG 1. Sour

 8.4. Size:1435K  cn vbsemi
 rqk0301fg.pdf

RQK0303MGDQA RQK0303MGDQA

RQK0301FGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

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