HAT1125H Todos los transistores

 

HAT1125H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT1125H

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: LFPAK

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HAT1125H datasheet

 8.1. Size:100K  renesas
rej03g1330 hat1127hds.pdf pdf_icon

HAT1125H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
hat1128r.pdf pdf_icon

HAT1125H

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

 8.3. Size:131K  renesas
rej03g0406 hat1126rrj.pdf pdf_icon

HAT1125H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... RJK0358DSP , HAT1132R , HAT1131R , HAT1130R , HAT1129R , HAT1128R , HAT1139H , HAT1127H , AO3407 , RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , 2SK216 , 2SJ76 , 2SJ77 , 2SJ78 .

 

 

 

 

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