HAT1125H. Аналоги и основные параметры
Наименование производителя: HAT1125H
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: LFPAK
Аналог (замена) для HAT1125H
- подборⓘ MOSFET транзистора по параметрам
HAT1125H даташит
rej03g1330 hat1127hds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat1128r.pdf
HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =
rej03g0406 hat1126rrj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... RJK0358DSP , HAT1132R , HAT1131R , HAT1130R , HAT1129R , HAT1128R , HAT1139H , HAT1127H , AO3407 , RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , 2SK216 , 2SJ76 , 2SJ77 , 2SJ78 .
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Список транзисторов
Обновления
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