Справочник MOSFET. HAT1125H

 

HAT1125H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HAT1125H
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для HAT1125H

 

 

HAT1125H Datasheet (PDF)

 8.1. Size:100K  renesas
rej03g1330 hat1127hds.pdf

HAT1125H
HAT1125H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
hat1128r.pdf

HAT1125H
HAT1125H

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S1 2 3Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

 8.3. Size:131K  renesas
rej03g0406 hat1126rrj.pdf

HAT1125H
HAT1125H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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