2SK216 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK216
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK216

2SK216 Datasheet (PDF)

..1. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

..2. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

0.1. Size:131K toshiba
2sk2162.pdf

0.2. Size:95K sanyo
2sk2160.pdf

Ordering number:ENN4600AN-Channel Silicon MOSFET2SK2160Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2160] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

0.3. Size:120K sanyo
2sk2167.pdf

Ordering number:ENN4631N-Channel Silicon MOSFET2SK2167Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2167]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta =

0.4. Size:88K sanyo
2sk2169.pdf

Ordering number:ENN4556N-Channel Silicon MOSFET2SK2169Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK2169]2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP

0.5. Size:96K sanyo
2sk2161.pdf

Ordering number:ENN4601AN-Channel Silicon MOSFET2SK2161Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2161] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

0.6. Size:199K no
2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf

Otros transistores... HAT1128R , HAT1139H , HAT1127H , HAT1125H , RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , 2N60 , 2SJ76 , 2SJ77 , 2SJ78 , 2SJ79 , 2SK1056 , 2SK1057 , 2SK1058 , 2SK2220 .

History: ITF87072DK8T

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