2SK216 Specs and Replacement
Type Designator: 2SK216
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO220AB
2SK216 substitution
2SK216 datasheet
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D... See More ⇒
2sk2160.pdf
Ordering number ENN4600A N-Channel Silicon MOSFET 2SK2160 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2160] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
Detailed specifications: HAT1128R , HAT1139H , HAT1127H , HAT1125H , RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , STF13NM60N , 2SJ76 , 2SJ77 , 2SJ78 , 2SJ79 , 2SK1056 , 2SK1057 , 2SK1058 , 2SK2220 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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