2SJ77 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ77
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 160 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
2SJ77 Datasheet (PDF)
rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj76 2sj77 2sj78 2sj79.pdf

2SJ76, 2SJ77, 2SJ78, 2SJ79Silicon P-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed power switchingComplementary pair with 2SK213, 2SK214, 2SK215, 2SK216Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Fl
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AM4462N | IRF624A | IPB120P04P4L-03 | IXFT14N80P | SI4464DY | DMC2041UFDB | SMP40N10
History: AM4462N | IRF624A | IPB120P04P4L-03 | IXFT14N80P | SI4464DY | DMC2041UFDB | SMP40N10



Liste
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