2SJ77 Specs and Replacement
Type Designator: 2SJ77
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO220AB
2SJ77 substitution
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2SJ77 datasheet
rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj76 2sj77 2sj78 2sj79.pdf
2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Fl... See More ⇒
Detailed specifications: HAT1127H, HAT1125H, RJK0358DPA, 2SK213, 2SK214, 2SK215, 2SK216, 2SJ76, 2N60, 2SJ78, 2SJ79, 2SK1056, 2SK1057, 2SK1058, 2SK2220, 2SK2221, 2SJ160
Keywords - 2SJ77 MOSFET specs
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