2SJ77 Datasheet and Replacement
Type Designator: 2SJ77
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO220AB
2SJ77 substitution
2SJ77 Datasheet (PDF)
rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj76 2sj77 2sj78 2sj79.pdf

2SJ76, 2SJ77, 2SJ78, 2SJ79Silicon P-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed power switchingComplementary pair with 2SK213, 2SK214, 2SK215, 2SK216Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Fl
Datasheet: HAT1127H , HAT1125H , RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , 2SK216 , 2SJ76 , IRF830 , 2SJ78 , 2SJ79 , 2SK1056 , 2SK1057 , 2SK1058 , 2SK2220 , 2SK2221 , 2SJ160 .
History: FCPF150N65F | NVD4806N | GSM7002K | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H
Keywords - 2SJ77 MOSFET datasheet
2SJ77 cross reference
2SJ77 equivalent finder
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History: FCPF150N65F | NVD4806N | GSM7002K | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H



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