2SJ79 Todos los transistores

 

2SJ79 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ79

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 50 Ohm

Empaquetado / Estuche: TO220AB

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2SJ79 Datasheet (PDF)

1.1. rej03g0122 2sj76 2sj77 2sj78 2sj79.pdf Size:78K _renesas

2SJ79
2SJ79

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj76 2sj77 2sj78 2sj79.pdf Size:33K _hitachi

2SJ79
2SJ79

2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D

 

Otros transistores... RJK0358DPA , 2SK213 , 2SK214 , 2SK215 , 2SK216 , 2SJ76 , 2SJ77 , 2SJ78 , IRLR2905 , 2SK1056 , 2SK1057 , 2SK1058 , 2SK2220 , 2SK2221 , 2SJ160 , 2SJ161 , 2SJ162 .

 
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