RQA0004PXDQS Todos los transistores

Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Silicon N-Channel MOS FET Sep 09, 2011 Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2, 4 Note Ma

Preliminary Datasheet R07DS0496EJ0200 RQA0004LXAQS (Previous REJ03G1567-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 30, 2011 Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1.

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is

Preliminary Datasheet R07DS0492EJ0200 RQA0009TXDQS (Previous REJ03G1520-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet R07DS0493EJ0200 RQA0009SXAQS (Previous REJ03G1566-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 28, 2011 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.