RQA0004PXDQS PDF and Equivalents Search

 

RQA0004PXDQS Specs and Replacement

Type Designator: RQA0004PXDQS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm

Package: UPAK SC62

RQA0004PXDQS substitution

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RQA0004PXDQS datasheet

 4.1. Size:143K  renesas
r07ds0418ej rqa0004pxd.pdf pdf_icon

RQA0004PXDQS

Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Silicon N-Channel MOS FET Sep 09, 2011 Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2, 4 Note Ma... See More ⇒

 7.1. Size:141K  renesas
r07ds0496ej rqa0004lxa.pdf pdf_icon

RQA0004PXDQS

Preliminary Datasheet R07DS0496EJ0200 RQA0004LXAQS (Previous REJ03G1567-0100) Rev.2.00 Silicon N-Channel MOS FET Jun 30, 2011 Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. ... See More ⇒

 8.1. Size:151K  1
rqa0008nxaqs.pdf pdf_icon

RQA0004PXDQS

RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A R (Package Name UPAK ) 3 1 2 1. Gate 3 2. Source 1 3. Drain 4. Source 4 2,... See More ⇒

 8.2. Size:75K  1
rqa0005aqs.pdf pdf_icon

RQA0004PXDQS

RQA0005AQS Silicon N-Channel MOS FET Preliminary Rev.1.0 Aug.10,2005 Features High Output Power, High Gain, High Efficiency Po = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code PLZZ0004CA-A (Package Name UPAK) 3 1 2 1. Gate 3 1 2. Source 3. Drain 4. Source 4 2 Note Marking is ... See More ⇒

Detailed specifications: 2SK2220, 2SK2221, 2SJ160, 2SJ161, 2SJ162, 2SJ351, 2SJ352, RQA0011DNS, IRFB7545, RQA0005QXDQS, RQA0010VXDQS, RQA0008RXDQS, RQA0009TXDQS, RQA0004LXAQS, RQA0005AQS, RQA0008NXAQS, RQA0009SXAQS

Keywords - RQA0004PXDQS MOSFET specs

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