2SK3833 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3833
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 48
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72
nS
Cossⓘ - Capacitancia
de salida: 300
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034
Ohm
Paquete / Cubierta:
TO3PB
Búsqueda de reemplazo de 2SK3833 MOSFET
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2SK3833 PDF Specs
..1. Size:40K sanyo
2sk3833.pdf 
Ordering number ENN8016 2SK3833 N-Channel Silicon MOSFET 2SK3833 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS ... See More ⇒
..2. Size:273K inchange semiconductor
2sk3833.pdf 
isc N-Channel MOSFET Transistor 2SK3833 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.1. Size:38K 1
2sk3834.pdf 
Ordering number ENN8017 2SK3834 N-Channel Silicon MOSFET 2SK3834 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS ... See More ⇒
8.2. Size:40K 1
2sk3831.pdf 
Ordering number ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS ... See More ⇒
8.3. Size:37K sanyo
2sk3836.pdf 
Ordering number EN8638 2SK3836 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3836 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)... See More ⇒
8.4. Size:39K sanyo
2sk3832.pdf 
Ordering number ENN8015 2SK3832 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3832 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.5. Size:39K sanyo
2sk3830.pdf 
Ordering number ENN8032 2SK3830 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3830 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS... See More ⇒
8.6. Size:37K sanyo
2sk3835.pdf 
Ordering number EN8637 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3835 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ... See More ⇒
8.7. Size:274K inchange semiconductor
2sk3836.pdf 
isc N-Channel MOSFET Transistor 2SK3836 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.8. Size:272K inchange semiconductor
2sk3834.pdf 
isc N-Channel MOSFET Transistor 2SK3834 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.9. Size:273K inchange semiconductor
2sk3831.pdf 
isc N-Channel MOSFET Transistor 2SK3831 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.10. Size:273K inchange semiconductor
2sk3832.pdf 
isc N-Channel MOSFET Transistor 2SK3832 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.11. Size:273K inchange semiconductor
2sk3830.pdf 
isc N-Channel MOSFET Transistor 2SK3830 FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.12. Size:273K inchange semiconductor
2sk3835.pdf 
isc N-Channel MOSFET Transistor 2SK3835 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
Otros transistores... 2SK3821
, 2SK3823
, 2SK3824
, 2SK3826
, 2SK3827
, 2SK3829
, 2SK3830
, 2SK3832
, IRFZ44
, 2SK3835
, 2SK3836
, 2SK4094
, 2SK4171
, 2SK4191LS
, 2SK4192LS
, 2SK4193LS
, 2SK4194LS
.