2SK3833. Аналоги и основные параметры
Наименование производителя: 2SK3833
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 300 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: TO3PB
Аналог (замена) для 2SK3833
- подборⓘ MOSFET транзистора по параметрам
2SK3833 даташит
..1. Size:40K sanyo
2sk3833.pdf 

Ordering number ENN8016 2SK3833 N-Channel Silicon MOSFET 2SK3833 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
..2. Size:273K inchange semiconductor
2sk3833.pdf 

isc N-Channel MOSFET Transistor 2SK3833 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:38K 1
2sk3834.pdf 

Ordering number ENN8017 2SK3834 N-Channel Silicon MOSFET 2SK3834 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.2. Size:40K 1
2sk3831.pdf 

Ordering number ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.3. Size:37K sanyo
2sk3836.pdf 

Ordering number EN8638 2SK3836 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3836 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)
8.4. Size:39K sanyo
2sk3832.pdf 

Ordering number ENN8015 2SK3832 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3832 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.5. Size:39K sanyo
2sk3830.pdf 

Ordering number ENN8032 2SK3830 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3830 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.6. Size:37K sanyo
2sk3835.pdf 

Ordering number EN8637 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3835 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)
8.7. Size:274K inchange semiconductor
2sk3836.pdf 

isc N-Channel MOSFET Transistor 2SK3836 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.8. Size:272K inchange semiconductor
2sk3834.pdf 

isc N-Channel MOSFET Transistor 2SK3834 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.9. Size:273K inchange semiconductor
2sk3831.pdf 

isc N-Channel MOSFET Transistor 2SK3831 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.10. Size:273K inchange semiconductor
2sk3832.pdf 

isc N-Channel MOSFET Transistor 2SK3832 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.11. Size:273K inchange semiconductor
2sk3830.pdf 

isc N-Channel MOSFET Transistor 2SK3830 FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.12. Size:273K inchange semiconductor
2sk3835.pdf 

isc N-Channel MOSFET Transistor 2SK3835 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
Другие MOSFET... 2SK3821
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History: BRCS2301MA
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