2SK3836 Todos los transistores

 ..1. Size:37K  sanyo
 2sk3836.pdf

Ordering number EN8638 2SK3836 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3836 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)

 ..2. Size:274K  inchange semiconductor
 2sk3836.pdf

isc N-Channel MOSFET Transistor 2SK3836 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:38K  1
 2sk3834.pdf

Ordering number ENN8017 2SK3834 N-Channel Silicon MOSFET 2SK3834 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.2. Size:40K  1
 2sk3831.pdf

Ordering number ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.3. Size:40K  sanyo
 2sk3833.pdf

Ordering number ENN8016 2SK3833 N-Channel Silicon MOSFET 2SK3833 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.4. Size:39K  sanyo
 2sk3832.pdf

Ordering number ENN8015 2SK3832 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3832 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.5. Size:39K  sanyo
 2sk3830.pdf

Ordering number ENN8032 2SK3830 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3830 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.6. Size:37K  sanyo
 2sk3835.pdf

Ordering number EN8637 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3835 Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)

 8.7. Size:272K  inchange semiconductor
 2sk3834.pdf

isc N-Channel MOSFET Transistor 2SK3834 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.8. Size:273K  inchange semiconductor
 2sk3833.pdf

isc N-Channel MOSFET Transistor 2SK3833 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:273K  inchange semiconductor
 2sk3831.pdf

isc N-Channel MOSFET Transistor 2SK3831 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.10. Size:273K  inchange semiconductor
 2sk3832.pdf

isc N-Channel MOSFET Transistor 2SK3832 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:273K  inchange semiconductor
 2sk3830.pdf

isc N-Channel MOSFET Transistor 2SK3830 FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.12. Size:273K  inchange semiconductor
 2sk3835.pdf

isc N-Channel MOSFET Transistor 2SK3835 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d