2SK3836
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK3836
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 33
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 65
ns
Cossⓘ - Выходная емкость: 300
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.034
Ohm
Тип корпуса:
TO3PML
- подбор MOSFET транзистора по параметрам
2SK3836
Datasheet (PDF)
..1. Size:37K sanyo
2sk3836.pdf 

Ordering number : EN8638 2SK3836N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3836ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
..2. Size:274K inchange semiconductor
2sk3836.pdf 

isc N-Channel MOSFET Transistor 2SK3836FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:38K 1
2sk3834.pdf 

Ordering number : ENN8017 2SK3834N-Channel Silicon MOSFET2SK3834 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.2. Size:40K 1
2sk3831.pdf 

Ordering number : ENN8028 2SK3831N-Channel Silicon MOSFET2SK3831 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.3. Size:40K sanyo
2sk3833.pdf 

Ordering number : ENN8016 2SK3833N-Channel Silicon MOSFET2SK3833 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.4. Size:39K sanyo
2sk3832.pdf 

Ordering number : ENN8015 2SK3832N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3832ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.5. Size:39K sanyo
2sk3830.pdf 

Ordering number : ENN8032 2SK3830N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3830ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.6. Size:37K sanyo
2sk3835.pdf 

Ordering number : EN8637 2SK3835N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3835ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
8.7. Size:272K inchange semiconductor
2sk3834.pdf 

isc N-Channel MOSFET Transistor 2SK3834FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.8. Size:273K inchange semiconductor
2sk3833.pdf 

isc N-Channel MOSFET Transistor 2SK3833FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.9. Size:273K inchange semiconductor
2sk3831.pdf 

isc N-Channel MOSFET Transistor 2SK3831FEATURESDrain Current : I = 85A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.10. Size:273K inchange semiconductor
2sk3832.pdf 

isc N-Channel MOSFET Transistor 2SK3832FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:273K inchange semiconductor
2sk3830.pdf 

isc N-Channel MOSFET Transistor 2SK3830FEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.12. Size:273K inchange semiconductor
2sk3835.pdf 

isc N-Channel MOSFET Transistor 2SK3835FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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