BUZ901DP Todos los transistores

 

BUZ901DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ901DP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO3PBL
     - Selección de transistores por parámetros

 

BUZ901DP Datasheet (PDF)

 ..1. Size:45K  magnatec
 buz900dp buz901dp.pdf pdf_icon

BUZ901DP

BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

 7.1. Size:44K  magnatec
 buz900d buz901d.pdf pdf_icon

BUZ901DP

BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

 7.2. Size:232K  inchange semiconductor
 buz901d.pdf pdf_icon

BUZ901DP

isc N-Channel MOSFET Transistor BUZ901DFEATURESDrain Current: I = 16A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.1. Size:63K  magnatec
 buz900 buz901.pdf pdf_icon

BUZ901DP

BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY

MOSTRAR MÁS

Otros transistores... BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , STF13NM60N , BUZ901P , BUZ901X4S , BUZ902 , BUZ902D , BUZ902DP , BUZ902P , BUZ903 , BUZ903D .

History: VS4020AP

 

 
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