Справочник MOSFET. BUZ901DP

 

BUZ901DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ901DP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 950 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO3PBL

 Аналог (замена) для BUZ901DP

 

 

BUZ901DP Datasheet (PDF)

 ..1. Size:45K  magnatec
 buz900dp buz901dp.pdf

BUZ901DP BUZ901DP

BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

 7.1. Size:44K  magnatec
 buz900d buz901d.pdf

BUZ901DP BUZ901DP

BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

 7.2. Size:232K  inchange semiconductor
 buz901d.pdf

BUZ901DP BUZ901DP

isc N-Channel MOSFET Transistor BUZ901DFEATURESDrain Current: I = 16A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.1. Size:63K  magnatec
 buz900 buz901.pdf

BUZ901DP BUZ901DP

BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY

 8.2. Size:35K  magnatec
 buz900x4s buz901x4s.pdf

BUZ901DP BUZ901DP

BUZ900X4SMAGNABUZ901X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.

 8.3. Size:42K  magnatec
 buz900p buz901p.pdf

BUZ901DP BUZ901DP

BUZ900PMAGNABUZ901PTECMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) NCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1

Другие MOSFET... BUZ90 , BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , STF13NM60N , BUZ901P , BUZ901X4S , BUZ902 , BUZ902D , BUZ902DP , BUZ902P , BUZ903 , BUZ903D .

 

 
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