5LN01S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5LN01S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 4.7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
Encapsulados: SMCP
Búsqueda de reemplazo de 5LN01S MOSFET
- Selecciónⓘ de transistores por parámetros
5LN01S datasheet
5ln01s.pdf
Ordering number EN6561A 5LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10
5ln01ss.pdf
Ordering number EN6560A 5LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS
5ln01sp.pdf
Ordering number ENN6559 5LN01SP N-Channel Silicon MOSFET 5LN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C
5ln01c.pdf
Ordering number EN6555A 5LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10
Otros transistores... 2SK4195LS , 2SK4197FG , 2SK4197FS , 2SK4198FG , 2SK4198FS , 2SK4199LS , 3LN01SS , 3LP01SS , IRFP250N , 5LP01C , 5LP01S , 5LP01SP , 5LP01SS , BBL4001 , BMS3003 , BMS3004 , BMS4003 .
History: ME2306A | SM3319NSQG | AP4506GEM-HF | DH012N03D
History: ME2306A | SM3319NSQG | AP4506GEM-HF | DH012N03D
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