5LN01S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 5LN01S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 4.7 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.8 Ohm
Тип корпуса: SMCP
- подбор MOSFET транзистора по параметрам
5LN01S Datasheet (PDF)
5ln01s.pdf

Ordering number : EN6561A5LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
5ln01ss.pdf

Ordering number : EN6560A5LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS
5ln01sp.pdf

Ordering number : ENN65595LN01SPN-Channel Silicon MOSFET5LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C
5ln01c.pdf

Ordering number : EN6555A5LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: STM6966 | OSG55R580DEF | IAUC100N10S5N040 | STU601S | ZVNL110ASTOB | IXFX80N60P3 | SHD219303
History: STM6966 | OSG55R580DEF | IAUC100N10S5N040 | STU601S | ZVNL110ASTOB | IXFX80N60P3 | SHD219303



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970 | a970 | d2390 transistor