5LP01SS Todos los transistores

Ordering number EN6666A 5LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS

Ordering number ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [5LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate 3.0 Specifications 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C

Ordering number ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. [5LP01N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Source 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Paramete

Ordering number EN6619A 5LP01C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 5LP01C Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS 10 V

Ordering number EN6135A 5LP01M SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01M General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS