5LP01SS
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 5LP01SS
Маркировка: XB
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(off)|ⓘ -
Минимальное напряжение отсечки: 0.4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.07
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 1.4
nC
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 4.2
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 23
Ohm
Тип корпуса: SSFP
Аналог (замена) для 5LP01SS
5LP01SS
Datasheet (PDF)
..1. Size:36K sanyo
5lp01ss.pdf Ordering number : EN6622A5LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01SS General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
8.1. Size:37K sanyo
5lp01s.pdf Ordering number : EN6666A5LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
8.2. Size:28K sanyo
5lp01sp.pdf Ordering number : ENN66215LP01SPP-Channel Silicon MOSFET5LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : Gate3.0Specifications3.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C
9.1. Size:27K sanyo
5lp01n.pdf Ordering number : ENN66205LP01NP-Channel Silicon MOSFET5LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LP01N]5.04.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta=25CParamete
9.2. Size:36K sanyo
5lp01c.pdf Ordering number : EN6619A5LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device5LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS 10 V
9.3. Size:250K sanyo
5lp01m.pdf Ordering number : EN6135A5LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFET5LP01MGeneral-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --50 VGate-to-Source Voltage VGSS
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