ECH8672 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8672
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 66 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: ECH8
Búsqueda de reemplazo de MOSFET ECH8672
ECH8672 Datasheet (PDF)
ech8672.pdf
ECH8672 Ordering number ENA1465 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8672 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2
ech8673.pdf
ECH8673 Ordering number ENA1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8673 Applications Features ON-resistance Nch RDS(on)1=65m (typ.), Pch ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications at Ta=25 C Absolute Maximum Ratings Paramet
ech8674.pdf
ECH8674 Ordering number ENA1436 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8674 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --1
ech8675.pdf
ECH8675 Ordering number ENA1437 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8675 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2
Otros transistores... CPH3356 , CPH3360 , CPH5617 , CPH6354 , CPH6355 , ECH8420 , ECH8656 , ECH8671 , 12N60 , ECH8674 , ECH8675 , EFC4612R , EFC4615R , EFC4618R-P , EMH2411R , FSS294 , FTS2057 .
History: BL4N150-A
History: BL4N150-A
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