ECH8672 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ECH8672
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: ECH8

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ECH8672 Datasheet (PDF)

..1. Size:276K sanyo
ech8672.pdf

ECH8672Ordering number : ENA1465SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8672ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2

8.1. Size:450K 1
ech8673.pdf

ECH8673Ordering number : ENA1892SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8673ApplicationsFeatures ON-resistance Nch: RDS(on)1=65m (typ.), Pch: ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFETSpecifications at Ta=25CAbsolute Maximum RatingsParamet

8.2. Size:275K sanyo
ech8674.pdf

ECH8674Ordering number : ENA1436SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8674ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1

8.3. Size:275K sanyo
ech8675.pdf

ECH8675Ordering number : ENA1437SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8675ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2

8.4. Size:276K sanyo
ech8671.pdf

ECH8671Ordering number : ENA1456SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8671ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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