FTS2057 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FTS2057
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET FTS2057

FTS2057 Datasheet (PDF)

..1. Size:382K sanyo
fts2057.pdf

FTS2057Ordering number : EN8989SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFTS2057ApplicationsFeatures ON-resistance RDS(on)1=96m (typ.) Input capacitance Ciss=1030pF(typ.) 4V drive Protection diode in Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condition

9.1. Size:99K sanyo
fts2003.pdf

Ordering number:ENN5993AN-Channel Silicon MOSFETFTS2003DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2147A Mount height of 1.1mm.[FTS2003]3.0 0.4250.65851 : Drain2 : Source3 : Source4 : Gate5 : Drain6 : Source7 : Source148 : Drain0.1250.25SpecificationsSANYO : TSSOP8Absolute Maximum Rat

9.2. Size:28K sanyo
fts2015.pdf

Ordering number : ENN6667FTS2015N-Channel Silicon MOSFETFTS2015Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 2.5V drive. 2147A Mount height 1.1mm.[FTS2015]3.0 0.4250.658 51 : Drain2 : Source3 : Source1 40.1254 : Gate0.255 : Drain6 : Source7 : Source8 : DrainSANYO : TSSOP8SpecificationsA

9.3. Size:43K sanyo
fts2002.pdf

Ordering number:EN5906N-Channel Silicon MOSFETFTS2002DC-DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V dirve.2147 Mount height 1.1mm.3.0[FTS2002]0.9750.658 51:Drain2:Source3:Source4:Gate5:Drain1 40.125 6:Source0.257:Source8:DrainSANYO:TSSOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CPara

9.4. Size:41K sanyo
fts2012.pdf

Ordering number:ENN6360N-Channel Silicon MOSFETFTS2012Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2147A Mounting height 1.1mm.[FTS2012]3.0 0.4250.65851 : Drain2 : Source3 : Source4 : Gate5 : Drain6 : Source147 : Source0.1258 : Drain0.25Specifications SANYO : TSSOP8Absolute Maxim

9.5. Size:166K sanyo
fts2004.pdf

Ordering number:ENN5949AN-Channel Silicon MOSFETFTS2004Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2147A Mounting height 1.1mm.[FTS2004]3.0 0.4250.65851 : Drain2 : Source3 : Source4 : Gate5 : Drain6 : Source7 : Source148 : Drain0.1250.25SANYO : TSSOP8SpecificationsAbsolute Max

9.6. Size:41K sanyo
fts2011.pdf

Ordering number:ENN6355N-Channel Silicon MOSFETFTS2011Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2147A Mounting height 1.1mm.[FTS2011]3.0 0.4250.65851 : Drain2 : Source3 : Source4 : Gate5 : Drain6 : Source147 : Source0.1258 : Drain0.25Specifications SANYO : TSSOP8Absolute Maximum Rating

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