MCH6603 Todos los transistores

 

MCH6603 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MCH6603

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 4.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 23 Ohm

Encapsulados: SOT363 MCPH6

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MCH6603 datasheet

 ..1. Size:38K  sanyo
mch6603.pdf pdf_icon

MCH6603

Ordering number EN6446B MCH6603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6603 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

 8.1. Size:42K  sanyo
mch6605.pdf pdf_icon

MCH6603

Ordering number ENN6460 P-Channel Silicon MOSFET MCH6605 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6605] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 Source1 2 Gate1 3 Drain2 4

 8.2. Size:252K  sanyo
mch6601.pdf pdf_icon

MCH6603

Ordering number EN6458B MCH6601 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6601 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 C Parame

 8.3. Size:30K  sanyo
mch6607.pdf pdf_icon

MCH6603

Ordering number ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6607] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 Source1

Otros transistores... FW216A , MCH3375 , MCH3376 , MCH3474 , MCH3476 , MCH3478 , MCH3479 , MCH6448 , 2SK3568 , SCH1333 , SCH1343 , SFT1345 , VEC2415 , 2SK715 , CPH3910 , CPH6904 , MCH3914 .

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