Справочник MOSFET. MCH6603

 

MCH6603 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MCH6603
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 4.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 23 Ohm
   Тип корпуса: SOT363 MCPH6

 Аналог (замена) для MCH6603

 

 

MCH6603 Datasheet (PDF)

 ..1. Size:38K  sanyo
 mch6603.pdf

MCH6603 MCH6603

Ordering number : EN6446B MCH6603SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6603ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

 8.1. Size:42K  sanyo
 mch6605.pdf

MCH6603 MCH6603

Ordering number:ENN6460P-Channel Silicon MOSFETMCH6605Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6605] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :

 8.2. Size:252K  sanyo
 mch6601.pdf

MCH6603 MCH6603

Ordering number : EN6458B MCH6601SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6601ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

 8.3. Size:30K  sanyo
 mch6607.pdf

MCH6603 MCH6603

Ordering number : ENN7039MCH6607P-Channel Silicon MOSFETMCH6607Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6607] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1

 8.4. Size:42K  sanyo
 mch6606.pdf

MCH6603 MCH6603

Ordering number:ENN6461N-Channel Silicon MOSFETMCH6606Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2173 4V drive.[MCH6606] Composite type with 2 MOSFETs contained in onepackage, facilitating high-density mounting. 0.3 0.156 5 41 2 30.652.01 : Source12 : Gate13 : Drain24 :

 8.5. Size:30K  sanyo
 mch6608.pdf

MCH6603 MCH6603

Ordering number : ENN7040MCH6608N-Channel Silicon MOSFETMCH6608Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6608] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source1

 8.6. Size:252K  sanyo
 mch6604.pdf

MCH6603 MCH6603

Ordering number : EN6459A MCH6604SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6604ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

 8.7. Size:30K  sanyo
 mch6609.pdf

MCH6603 MCH6603

Ordering number : ENN7041MCH6609P-Channel Silicon MOSFETMCH6609Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6609] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 10.651 : Source

 8.8. Size:60K  sanyo
 mch6602.pdf

MCH6603 MCH6603

Ordering number : EN6445B MCH6602SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6602ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.SpecificationsAbsolute Maximum Ratings at Ta=25CParame

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